DMBTA44 discrete semiconductors r dc components co., ltd. technical specifications of npn epitaxial planar transistor description designed for applications requiring high breakdown voltage. pinning 1 = base 2 = emitter 3 = collector .091(2.30).067(1.70) sot-23 dimensions in inches and (millimeters) .063(1.60).055(1.40) .108(0.65).089(0.25) .045(1.15).034(0.85) .118(3.00) .110(2.80) .020(0.50).012(0.30) .0043(0.11) .0035(0.09) .004 (0.10) .051(1.30).035(0.90) .026(0.65).010(0.25) max .027(0.67).013(0.32) 2 1 3 characteristic symbol rating unit collector-base voltage vcbo 450 v collector-emitter voltage vceo 400 v emitter-base voltage vebo 6 v collector current ic 300 ma total power dissipation pd 350 mw junction temperature tj +150 oc storage temperature tstg -55 to +150 oc absolute maximum ratings(ta=25oc) characteristic symbol min typ max unit test conditions collector-base breakdown volatge bvcbo 450 - - v ic=100ma collector-emitter breakdown voltage bvceo 400 - - v ic=1ma emitter-base breakdown volatge bvebo 6 - - v ie=10ma collector cutoff current icbo - - 100 na vcb =400v ices - - 500 na vce =400v emitter cutoff current iebo - - 100 na veb =4v vce(sat)1 - - 0.4 v ic=1ma, ib=0.1ma collector-emitter saturation voltage (1) vce(sat)2 - - 0.5 v ic=10ma, ib=1ma vce(sat)3 - - 0.75 v ic=50ma, ib=5ma base-emitter saturation voltage (1) vbe(sat) - - 0.75 v ic=10ma, ib=1ma hfe1 40 - - - ic=1ma, vce=10v dc current gain(1) hfe2 50 - 300 - ic=10ma, vce=10v hfe3 45 - - - ic=50ma, vce=10v hfe4 40 - - - ic=100ma, vce=10v output capacitance cob - 4 6 pf vcb =20v, f=1mhz electrical characteristics(ratings at 25 oc ambient temperature unless otherwise specified) (1)pulse test: pulse width 380ms, duty cycle 2%
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